Low

FDG6303N - 

Dual MOSFET, Dual N Channel, 500 mA, 25 V, 0.34 ohm, 4.5 V, 800 mV

FAIRCHILD SEMICONDUCTOR FDG6303N

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Част № на производителя:
FDG6303N
Код на поръчката:
1611233RL
Лист с технически данни:
(EN)
Вижте цялата техническа документация

Информация за продукта

:
300mW
:
150°C
:
500mA
:
Dual N Channel
:
6Pins
:
800mV
:
-
:
-
:
25V
:
4.5V
:
SC-70
:
0.34ohm
:
MSL 1 - Unlimited
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Преглед на продукта

The FDG6303N is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
  • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <1.5V)
  • Gate-source Zener for ESD ruggedness
  • Compact industry standard surface-mount-package
  • -0.5 to 8V Gate to source voltage
  • 0.5A Continuous drain/output current
  • 1.5A Pulsed drain/output current

Приложения

Industrial, Power Management