A1395SEHLT-T

The A1395SEHLT-T is a 3V micro power linear Hall Effect Sensor IC with tri-state output and user-selectable sleep mode. It provides a voltage output that is directly proportional to an applied magnetic field. Before amplification, the sensitivity is directly proportional to the current flowing through the hall effect transducer element inside the IC. In many applications, it is difficult to achieve sufficient sensitivity levels with a hall effect sensor IC without consuming more than 3mA of current. Each BiCMOS monolithic circuit integrates a hall element, improved temperature-compensating circuitry to reduce the intrinsic sensitivity drift of the hall element, a small-signal high-gain amplifier and proprietary dynamic offset cancellation circuits. End of line, post-packaging, factory programming allows precise control of device sensitivity and offset.

• High-impedance output during sleep mode
• Compatible with 2.5 to 3.5V power supplies
• 10mW Power consumption in active mode
• Ratiometric output scales with ratiometric supply reference voltage (VREF pin)
• Temperature-stable quiescent output voltage and sensitivity
• ESD protection greater than 3kV
• Solid-state reliability
• Preset sensitivity and offset at final test

Приложения

Consumer Electronics, Portable Devices

Предупреждения

ESD sensitive device, take proper precaution while handling the device. Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.