HMC618ALP3ETR

HMC618ALP3E is a GaAs pHEMT MMIC low-noise amplifier that is ideal for cellular/3G and LTE/WiMAX/4G base station front-end receivers operating between 1.2GHz to 2.2GHz. This amplifier has been optimized to provide 0.75dB noise figure, 19dB gain and +36dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. It can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. It is widely used in applications such as cellular/3G and LTE/WiMAX/4G, BTS & infrastructure, repeaters and femto cells, public safety radios etc.

• Gain is 19dB typical at (1700MHz - 2000MHz, TA = +25°C)
• Gain variation over temperature is 0.008dB/°C typ at (1700MHz - 2000MHz, TA = +25°C)
• Input return loss is 18dB typ at (1700MHz - 2000MHz, TA = +25°C)
• Output return loss is 12.5dB typ at (1700MHz - 2000MHz, TA = +25°C)
• Output power for 1dB compression is 20dBm typ at (1700MHz - 2000MHz, TA = +25°C)
• Saturated output power is 20.5dBm typ at (1700MHz - 2000MHz, TA = +25°C)
• Output third order intercept is 35dBm typ at (1700MHz - 2000MHz, TA = +25°C)
• Supply current is 89mA typ at (1700MHz - 2000MHz, TA = +25°C)
• Operating temperature is -40°C to +85°C
• Package style is 16-lead SMT

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