HMC903LP3ETR

HMC903LP3E is a self biased, gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic (pHEMT), low noise amplifier (LNA) with an option bias control for IDQ reduction. This device features an input and an output that are dc blocked and internally matched to 50 ohm, making it ideal for high capacity microwave radios and video satellite (VSAT) applications. It is used in application such as point to point radios, point to multipoint radios, military and space, test instrumentation etc.

• Low noise figure is 1.7dB typical at (6GHz to 16GHz)
• High gain is 18.5dB typical at (6GHz to 16GHz)
• Output power for 1dB compression (P1dB) is 14.5dBm typical at 6GHz to 16GHz
• Single-supply voltage is 3.5V typical at (80mA)
• Output third-order intercept (IP3) is 25dBm typical
• Self biased with optional bias control for IDQ reduction
• Supply current is 60mA typical at (6GHz to 16GHz)
• Operating temperature is -40°C to +85°C
• Package style is 16-lead LFCSP

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