FM24CL64B-G

FM24CL64B-G is a FM24CL64B 64Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. This is ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss.

• 64Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Up to 1MHz frequency, direct hardware replacement for serial (I2C) EEPROM
• Low power consumption, 120μA (typ) active current at 100kHz
• Voltage operation: VDD = 3.0V to 3.6V
• Automotive-E temperature range from –40°C to +125°C
• AEC Q100 grade 1 compliant
• 8-pin SOIC package
• Direct hardware replacement for serial (I2C) EEPROM