1 600 Можете да резервирате наличност сега
Количество | |
---|---|
1+ | € 1,160 |
10+ | € 0,838 |
100+ | € 0,670 |
500+ | € 0,537 |
1000+ | € 0,466 |
5000+ | € 0,451 |
Информация за продукта
Преглед на продукта
The IRF530NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
Приложения
Power Management
Технически характеристики
N Channel
17A
TO-263 (D2PAK)
10V
70W
175°C
-
No SVHC (21-Jan-2025)
100V
0.09ohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Технически документи (1)
Алтернативи за IRF530NSTRLPBF
3 Намерени продукта
Законодателство и околна среда
Страна, в която е реализиран последният важен производствен процесСтрана на произход:China
Страна, в която е реализиран последният важен производствен процес
RoHS
RoHS
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