Имате нужда от повече?
Количество | |
---|---|
1+ | € 2,390 |
10+ | € 1,540 |
50+ | € 1,370 |
100+ | € 1,140 |
250+ | € 1,070 |
500+ | € 0,936 |
1000+ | € 0,814 |
2500+ | € 0,737 |
Информация за продукта
Преглед на продукта
The IRS2302SPBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- 3.3, 5 and 15V Input logic compatible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- High-side output in phase with input
- Internal 450ns dead-time
- Lower di/dt gate driver for better noise immunity
- Shut down input turns-OFF both channels
Приложения
Motor Drive & Control, Power Management
Технически характеристики
2Channels
High Side
8Pins
Surface Mount
200mA
5V
-40°C
220ns
-
-
-
IGBT, MOSFET
SOIC
Non-Inverting
350mA
20V
125°C
200ns
-
No SVHC (21-Jan-2025)
Технически документи (1)
Алтернативи за IRS2302SPBF
Открит е 1 продукт
Сродни продукти
Открит е 1 продукт
Законодателство и околна среда
Страна, в която е реализиран последният важен производствен процесСтрана на произход:Malaysia
Страна, в която е реализиран последният важен производствен процес
RoHS
RoHS
Сертификат за съответствие на продукта