HFA3096BZ
Bipolar Transistor Array, Complementary NPN and PNP, 8 V, 8 V, 37 mA, 37 mA, 150 mW
Имате нужда от повече?
| Количество | |
|---|---|
| 1+ | € 11,250 |
| 5+ | € 10,440 |
| 10+ | € 9,630 |
| 50+ | € 8,830 |
| 100+ | € 8,020 |
| 250+ | € 7,560 |
Информация за продукта
Преглед на продукта
The HFA3096BZ is a NPN-PNP ultra-high frequency Bipolar Transistor Array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.
- 3.5dB Noise figure (50Ω) at 1GHz
- <lt/>1pA Collector to collector leakage
- Complete isolation between transistors
Приложения
RF Communications, Sensing & Instrumentation, Industrial, Power Management
Бележки
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Технически характеристики
Complementary NPN and PNP
8V
37mA
150mW
130hFE
16Pins
125°C
5.5GHz
-
No SVHC (21-Jan-2025)
8V
37mA
150mW
130hFE
SOIC
Surface Mount
8GHz
-
MSL 3 - 168 hours
Технически документи (2)
Законодателство и околна среда
Страна, в която е реализиран последният важен производствен процесСтрана на произход:Philippines
Страна, в която е реализиран последният важен производствен процес
RoHS
RoHS
Сертификат за съответствие на продукта