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Three-phase inverter reference design and evaluation board populated with six GD3160 gate drivers for IGBT/SiC MOSFET devices. This board supports SPI daisy chain communication for programming and communication with three high-side gate drivers and three low-side gate drivers independently and comes with fault management and supporting circuitry. Evaluation kit is designed to connect to a compatible HybridPACK™ Drive SIC/IGBT module or onsemi VE-trac™ IGBT module for full three phase inverter applications development.
- 3 phase reference design for HP drive featuring GD3160
- GD3160 advanced single channel gate driver for IGBT and SiC MOSFETs
- Integrated galvanic signal isolation (up to 8KV)
- SPI interface for safety monitoring, configuration and diagnostic reporting
- Fail-safe state management from LV and HV domain for user-selectable safe state
- Configurable desaturation and current sense optimized for protecting SiC and IGBTs
- Integrated ADC for monitoring parameters from HV domain
- Certified compliant with ISO 26262, supporting ASIL D level functional safety
Съдържание
Three-phase inverter reference design and evaluation board, Quick start guide.
Технически характеристики
NXP
IGBT/SiC Gate Driver
Reference Design Board GD3160, PCIe Cable (S32SDEV-CON18), Anti-Static Bag, Quick Start Guide
No SVHC (27-Jun-2024)
GD3160
3-Phase EV Motor Control
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Технически документи (1)
Законодателство и околна среда
Страна, в която е реализиран последният важен производствен процесСтрана на произход:United States
Страна, в която е реализиран последният важен производствен процес
RoHS
RoHS
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