STW10NK80Z
Power MOSFET, N Channel, 800 V, 9 A, 0.9 ohm, TO-247, Through Hole
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| Количество | |
|---|---|
| 1+ | € 5,510 |
| 10+ | € 2,560 |
| 100+ | € 2,320 |
| 500+ | € 2,290 |
| 1000+ | € 2,250 |
Информация за продукта
Преглед на продукта
The STW10NK80Z is a 800V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- Extremely high dv/dt capability
- 100% Avalanche tested
- Gate charge minimized
- Very low intrinsic capacitance
- Very good manufacturing repeatability
Приложения
Industrial
Предупреждения
ESD sensitive device, take proper precaution while handling the device. Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Технически характеристики
N Channel
9A
TO-247
10V
160W
150°C
-
800V
0.9ohm
Through Hole
3.75V
3Pins
-
No SVHC (21-Jan-2025)
Технически документи (2)
Алтернативи за STW10NK80Z
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Сродни продукти
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Законодателство и околна среда
Страна, в която е реализиран последният важен производствен процесСтрана на произход:China
Страна, в която е реализиран последният важен производствен процес
RoHS
RoHS
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