IRFI640GPBF
Power MOSFET, N Channel, 200 V, 9.8 A, 0.18 ohm, TO-220FP, Through Hole
1 000 Можете да резервирате наличност сега
| Количество | |
|---|---|
| 1+ | € 2,190 |
| 10+ | € 1,290 |
| 100+ | € 1,210 |
| 500+ | € 1,190 |
| 1000+ | € 1,140 |
| 5000+ | € 1,120 |
Информация за продукта
Преглед на продукта
The IRFI640GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
- Isolated package
- 2.5kVRMS (t = 60s, f = 60Hz) High voltage isolation
- 4.8mm Sink to lead creepage distance
- Dynamic dV/dt rating
- Low thermal resistance
Приложения
Industrial, Power Management, Commercial
Технически характеристики
N Channel
9.8A
TO-220FP
10V
40W
150°C
-
Lead (21-Jan-2025)
200V
0.18ohm
Through Hole
4V
3Pins
-
-
Технически документи (2)
Алтернативи за IRFI640GPBF
2 Намерени продукта
Законодателство и околна среда
Страна, в която е реализиран последният важен производствен процесСтрана на произход:Great Britain
Страна, в която е реализиран последният важен производствен процес
RoHS
RoHS
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