C2M0025120D
Silicon Carbide MOSFET, Single, N Channel, 90 A, 1.2 kV, 0.025 ohm, TO-247
Имате нужда от повече?
| Количество | |
|---|---|
| 1+ | € 89,530 |
| 5+ | € 82,250 |
| 10+ | € 74,970 |
| 50+ | € 73,710 |
Информация за продукта
Преглед на продукта
The C2M0025120D from Cree is a 2nd generation Z-FET, through hole N channel silicon carbide power MOSFET in TO-247 package. This MOSFET features C2M SiC MOSFET technology, high blocking voltage with low on resistance, high speed switching with low capacitances, easy to parallel and simple to drive, avalanche ruggedness, resistant to latch up, higher system efficiency, reduced cooling requirements and increased power density. Applications include solar inverters, switch mode power supplies, high voltage DC-DC converters and battery chargers.
- Drain to source voltage (Vds) of 1.2kV
- Continuous drain current of 90A
- Power dissipation of 463W
- Operating junction temperature of -55°C to 150°C
- Low on state resistance of 25mohm at Vgs of 20V
Приложения
Power Management, Consumer Electronics, Portable Devices, Industrial, Motor Drive & Control, Alternative Energy
Предупреждения
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Технически характеристики
Single
90A
0.025ohm
3Pins
2.4V
150°C
-
N Channel
1.2kV
TO-247
20V
463W
-
No SVHC (17-Dec-2014)
Технически документи (2)
Алтернативи за C2M0025120D
Открит е 1 продукт
Сродни продукти
2 Намерени продукта
Законодателство и околна среда
Страна, в която е реализиран последният важен производствен процесСтрана на произход:Philippines
Страна, в която е реализиран последният важен производствен процес
RoHS
RoHS
Сертификат за съответствие на продукта