FCD4N60TM
Power MOSFET, N Channel, 600 V, 3.9 A, 1 ohm, TO-252 (DPAK), Surface Mount
Имате нужда от повече?
| Количество | |
|---|---|
| 1+ | € 1,980 |
| 10+ | € 1,340 |
| 100+ | € 0,897 |
| 500+ | € 0,751 |
| 1000+ | € 0,692 |
| 5000+ | € 0,625 |
Информация за продукта
Преглед на продукта
The FCD4N60TM is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- Ultra low gate charge (Qg = 12.8nC)
- Low effective output capacitance (Coss.eff = 32pF)
- 100% avalanche tested
Приложения
Industrial, Power Management, Communications & Networking, Lighting, Alternative Energy
Предупреждения
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Технически характеристики
N Channel
3.9A
TO-252 (DPAK)
10V
50W
150°C
-
Lead (27-Jun-2024)
600V
1ohm
Surface Mount
5V
3Pins
-
MSL 1 - Unlimited
Технически документи (2)
Законодателство и околна среда
Страна, в която е реализиран последният важен производствен процесСтрана на произход:China
Страна, в която е реализиран последният важен производствен процес
RoHS
RoHS
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